| PART |
Description |
Maker |
| MT88E46 MT88E46AS |
Bellcore Compliant Calling Number Identification Circuit TELEPHONE CALLING NO IDENT CKT, PDSO20
Dual inputs (tip/ring and 4 wire) Bellcore compliant Extended Voltage Calling Number Identification Circuit for CID, CIDCW and CWD (Type 2 and 2.5)
|
Zarlink Semiconductor, Inc.
Zarlink Semiconductor Inc.
|
| K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B- |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM48V8104B KM48V8004B KM48V8004BKL-5 KM48V8004BKL- |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HCMS-235 HCMS-2351 HCMS-2353 HCMS-235X |
HCMS-2351 · CMOS Extended Temperature Range 5x7 Alphanumeric Display
CMOS Extended Temperature Range 5 x 7 Alphanumeric Display
|
Agilent (Hewlett-Packard)
Agilent(Hewlett-Packard)
|
| K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TC |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle.
16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM416V4104B KM416V4004B KM416V4004BSL-45 KM416V400 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4E660412E-JI45 K4E640412E-JP45 K4E660412E-JI60 K4 |
Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 33uF; Voltage: 100V; Case Size: 10x25 mm; Packaging: Bulk
CONNECTOR ACCESSORY
16M x 4bit CMOS Dynamic RAM with Extended Data Out 16米x 4位的CMOS动态随机存储器的扩展数据输
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| FL-3348-XXS FL-3345-XF FL-3340 FL-3345-VF FL-3340- |
400 W Transient Voltage Suppressors 28 V SMA Bidirectional
1500 W Transient Voltage Suppressor 9.0 V SMC Unidirectional
/-1C TDM Extended Temp Range I.C. 4Ch 1310 nm激光二极管模块致冷量子阱，计划生育与辫子劳工处
1310 nm LASER DIODE MODULES UNCOOLED MQW-FP LD WITH PIGTAIL 1310 nm激光二极管模块致冷量子阱，计划生育与辫子劳工处
/-1C TDM Extended Temp Range I.C. 4Dh 1310 nm激光二极管模块致冷量子阱，计划生育与辫子劳工处
|
Optoway Technology Inc.
Optoway Technology, Inc.
|
| K4E170811D K4E170812D K4E160811D K4E160812D |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out
|
SAMSUNG[Samsung semiconductor]
|
| KM416C1004C-5 KM416C1004C-L45 KM416C1004C-L5 KM416 |
1M X 16BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT
|
SAMSUNG[Samsung semiconductor]
|
| GLT4160M04-60J3 GLT4160M04-60TC |
60ns; 4K x 4 CMOS dynamic RAM with extended data output
|
G-LINK Technology
|
| GLT440L16 GLT440L16-35TC GLT440L16-40TC GLT440L16- |
256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
|
List of Unclassifed Manufacturers
ETC
|
